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IRG4RC20F

International Rectifier
Part Number IRG4RC20F
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 27, 2009
Detailed Description PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies (1-...
Datasheet PDF File IRG4RC20F PDF File

IRG4RC20F
IRG4RC20F

Overview
PD - 91731A IRG4RC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBTs.
• Industry standard TO-252AA package • Combines very low VCE(on) with low switching losses C Fast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
82V @VGE = 15V, IC = 12A N-channel Benefits • Generation 4 IGBTs offer highest efficiency • Optimized for specific application conditions • High power density and current rating D-Pak TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = ...


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