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SIR410DP

Part Number	SIR410DP
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Sep 27, 2009
Detailed Description	SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0048 at VGS = 10 V 0.006...
Datasheet	SIR410DP PDF File

Overview

SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.
0048 at VGS = 10 V 0.
0063 at VGS = 4.
5 V ID (A)a 35 12.
7 nC 35 Qg (Typ.
) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS • DC/DC Converter - Notebook - POL D 6.
15 mm S 1 2 3 S S 5.
15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR410DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 ...

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SIR410DP N-Channel MOSFET - Vishay Siliconix

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