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AGR19090E

TriQuint Semiconductor
Part Number AGR19090E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel la...
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AGR19090E
AGR19090E

Overview
AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features Typical performance over entire GSM band: — P1dB: 90 W typical.
— Continuous wave (CW) power gain: @ P1dB = 14.
0 dB.
— CW Efficiency @ P1dB = 50% typical.
— Return loss: –12 dB.
Device Perfo...


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