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AGR26125E

TriQuint Semiconductor
Part Number AGR26125E
Manufacturer TriQuint Semiconductor
Description Transistor
Published Oct 5, 2009
Detailed Description AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-me...
Datasheet PDF File AGR26125E PDF File

AGR26125E
AGR26125E

Overview
AGR26125E 125 W, 2.
5 GHz—2.
7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) for broadcasting and communications.
) Table 1.
Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR26125EU AGR26125EF Sym Rı JC Rı JC Value 0.
5 0.
5 Unit °C/W °C/W Table 2.
Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR26125EU AGR26125EF Derate Above 25 ° C: AGR26125EU AGR2...


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