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IPB80CN10NG

Infineon Technologies
Part Number IPB80CN10NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Oct 7, 2009
Detailed Description IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Features • N-channel, norma...
Datasheet PDF File IPB80CN10NG PDF File

IPB80CN10NG
IPB80CN10NG

Overview
IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 78 13 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Package Marking PG-TO263-3 80CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N PG-TO220-3 80CN10N PG-TO251-3 78CN10N Maximum ratings, at T j=25 °C, unless otherw...


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