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FDB039N06

Fairchild Semiconductor
Part Number FDB039N06
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features •...
Datasheet PDF File FDB039N06 PDF File

FDB039N06
FDB039N06

Overview
FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.
9mΩ Features • RDS(on) = 2.
95mΩ ( Typ.
) @ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application • DC to DC convertors / Synchronous Rectification D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol www.
DataSheet4U.
com VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Parameter Ratings 60 ±20 -Continuous (TC = 25...


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