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FDB3860

Fairchild Semiconductor
Part Number FDB3860
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ Features „ M...
Datasheet PDF File FDB3860 PDF File

FDB3860
FDB3860

Overview
FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.
9 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.
This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications „ DC-AC Conversion „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.
DataSheet4U.
com Sy...


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