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FDMC6675BZ

Fairchild Semiconductor
Part Number FDMC6675BZ
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features „ Max...
Datasheet PDF File FDMC6675BZ PDF File

FDMC6675BZ
FDMC6675BZ

Overview
FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.
4 mΩ Features „ Max rDS(on) = 14.
4 mΩ at VGS = -10 V, ID = -9.
5 A „ Max rDS(on) = 27.
0 mΩ at VGS = -4.
5 V, ID = -6.
9 A „ HBM ESD protection level of 8 kV typical(note 3) „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant June 2009 General Description The FDMC6675BZ has been designed to minimize losses in load switch applications.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Application „ Load Switch in Notebook and Server „ Notebook Battery Pack Power Management Top Pin 1 S S S G Bottom D D D D D D D D 8 1 5 6 7 4 3 2 G S S S MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted www.
DataSheet4U.
com Symbol VDS VGS Parameter Drain to Sou...


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