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RJP4003ASA

Renesas Technology
Part Number RJP4003ASA
Manufacturer Renesas Technology
Description Nch IGBT
Published Oct 18, 2009
Detailed Description RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.1.00 Oct 13, 2006 Features • • • • Small surface mount package...
Datasheet PDF File RJP4003ASA PDF File

RJP4003ASA
RJP4003ASA

Overview
RJP4003ASA Nch IGBT for Strobe Flash REJ03G1475-0100 Rev.
1.
00 Oct 13, 2006 Features • • • • Small surface mount package (TSSOP-8) VCES : 400 V ICM : 150 A Drive voltage : 4 V Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 5 8 4 1 4 3 2 1 1, 2, 3, 4 : Collector 5, 6, 7 : Emitter 8 : Gate 5 6 7 8 Applications Strobe flash for cameras Maximum Ratings (Tc = 25°C) Parameter www.
DataSheet4U.
com Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 ±6 ±8 150 – 40 to +150 – 40 to +150 Unit V V V A °C °C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 µF (see performance curve) Rev.
1.
00 Oct 13, 2006 page 1 of 4 RJP4003ASA Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min.
450 — — 0.
5 — — Typ.
— — — 0.
7 5.
0 5000 Max.
— 10 ±10 1.
5 10.
0 — Unit V µA µA V V pF Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±6 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 150 A, VGE = 4 V VCE = 25 V, VGE = 10 V, f = 1MHz Performance Curves Maximum Pulse Collector Current (Conductive Capability in Strobe Flash Applications) 200 Pulse Collector Current ICM (A) 150 TC = 70°C CM = 400 µF RG = 68 Ω 100 50 0 0 2 4 6 8 Gate - Emitter Voltage VGE (V) www.
DataSheet4U.
com Rev.
1.
00 Oct 13, 2006 page 2 of 4 RJP4003ASA Application Example VCM Trigger Transformer Xe Tube CM + – 4 3 2 1 IGBT driver RD5CYD08 RD5CYDT08 5 6 7 8 VCM ICP CM VGE Recommended Operation Maximum Operation Conditions Conditions 330 V 350 V 130 A 330 µF 5V 150 A 400 µF 4V Precautions on Usage 1.
IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So pleas...


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