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CY7C1168V18

Part Number	CY7C1168V18
Manufacturer	Cypress Semiconductor
Description	(CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
Published	Nov 1, 2009
Detailed Description	CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)...
Datasheet	CY7C1168V18 PDF File

Overview

CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.
5 Cycle Read Latency) Features ■ ■ ■ ■ ■ ■ Functional Description The CY7C1166V18, CY7C1177V18, CY7C1168V18, and CY7C1170V18 are 1.
8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture.
The DDR-II+ consists of an SRAM core with an advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising edges of the input (K) clock.
Write data is registered on the rising edges of both K and K.
Read data is driven on the rising edges of K and K.
Each address location is associated with two 8-bit words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-b...

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CY7C1168V18 (CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture - Cypress Semiconductor

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