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MP4TD0300

M-pulse Microwave
Part Number MP4TD0300
Manufacturer M-pulse Microwave
Description Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...
Datasheet PDF File MP4TD0300 PDF File

MP4TD0300
MP4TD0300

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 2.
0 GHz • 12 dB Typical Gain @ 1.
0 GHz • Unconditionally Stable (k>1) Chip Outline Drawing1,2,3,4 RF Input Optional +12 Volt Optional +15 Volt MP4TD0300 V4.
00 Description M-Pulse's MP4TD0300 is a high performance silicon bipolar MMIC chip.
The MP4TD0300 is designed for use where a general purpose 50Ω gain block is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0300 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
Ground Optional RF Output & + 5 Volts* 375 µ (14.
8 mil) 375 µ (14.
8 mil) 14 12 TYPICAL POWER GAIN vs FREQUENCY Id=35m A 10 GAIN (dB) 8 6 4 2 0 0.
01 www.
DataSheet4U.
com 0.
1 FR E QUE N CY (G H z) 1 10 Gain Flat to D C Notes: (unless otherwise specified) 1.
Chip Thickness is 120 µ m; 4.
8 mils 2.
Bond Pads are 40 µ m; 1.
6 mils typical in diameter 3.
Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4.
Tolerance:µ m .
xx = ±.
13; mil .
x = ±.
5 Ordering Information Model No.
MP4TD0300G MP4TD0300W Type of Carrier GEL PACK Waffle Pack Electrical Specifications @ T A = +25°C, Id = 35 mA; Z0 = 50Ω Symbol Parameters Test Conditions Gp f = 0.
1 GHz Power Gain (S212) Gain Flatness f = 0.
1 to 1.
5 GHz ∆Gp f 3dB 3 dB Bandwidth SWRin Input SWR f = 0.
1 to 3.
0 GHz SWRout Output SWR f = 0.
1 to 2.
0 GHz P1dB Output Power @ 1dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient Specification Subject to Change Without Notice Units dB dB GHz dBm dB dBm ps V mV/°C Min.
4.
5 - Typ.
13.
0 + 1.
0 2.
0 1.
4 1.
4 10.
0 5.
5 23.
0 125 5.
0 -8.
0 Max.
5.
5 - M-Pulse Microwave 1 ____________________________________...


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