DatasheetsPDF.com

MP4TD0420

M-pulse Microwave
Part Number MP4TD0420
Manufacturer M-pulse Microwave
Description Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...
Datasheet PDF File MP4TD0420 PDF File

MP4TD0420
MP4TD0420

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 2.
5 GHz • 9.
5 dB Typical Gain @ 1.
0 GHz • Unconditionally Stable (k>1) • Hermetic Gold-BeO Microstrip Package • Tape and Reel Packaging Available Description M-Pulse's MP4TD0420 is a high performance silicon bipolar MMIC housed in a hermetic high reliability stripline package.
The MP4TD0420 is useful where a general purpose 50Ω gain block with moderate P1 dB characteristic is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0420 is fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY 12 11 10 GAIN (dB) 9 8 7 6 Id = 9 0 m A MP4TD0420 Gold-BeO Microstrip Package Outline1,2 2 0.
030 0.
762 3 1 4 0.
30 7.
62 TYP.
0.
060 1.
525 0.
053 1.
35 0.
132 5.
42 DIA 0.
003 0.
076 0.
205 5.
21 DIA 0.
020 0.
51 Notes: (unless otherwise specified) 1.
Dimensions are in / mm 2.
Tolerance: in .
xxx = ±.
005; mm .
xx = ±.
13 Pin Configuration G ain F lat to D C 5 Pin Number 1 2&4 3 1 F R E Q U E N C Y (G H z) 10 Pin Description RF Input AC/DC Ground RF Output and DC Bias Package Hermetic Ceramic Units dB dB GHz dBm dB dBm ps V mV/°C Min.
8.
5 14.
0 5.
7 Typ.
9.
5 ±0.
5 2.
5 1.
4 1.
8 15.
0 6.
5 28.
0 140 6.
3 -8.
0 Max.
10.
0 ±0.
8 6.
9 - www.
DataSheet4U.
com 0 .
1 Ordering Information Model No.
MP4TD0420 Electrical Specifications @ TA = +25°C, Id = 90 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (⏐S21⏐2) f = 0.
1 GHz Gain Flatness f = 0.
1 to 1.
5 GHz ΔGp f3 dB 3 dB Bandwidth SWRin Input SWR f = 0.
1 to 3.
0 GHz SWRout Output SWR f = 0.
1 to 3.
0 GHz P1 dB Output Power @ 1 dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient - S...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)