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MP4TD0910

M-pulse Microwave
Part Number MP4TD0910
Manufacturer M-pulse Microwave
Description Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...
Datasheet PDF File MP4TD0910 PDF File

MP4TD0910
MP4TD0910

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 5.
0 GHz • 7.
5 dB Typical Gain @ 1.
0 GHz • Input & Output SWR: <1.
9 from 0.
1 to 3.
0 GHz • Hermetic Gold-Ceramic Microstrip Package • Tape and Reel Packaging Available Description M-Pulse's MP4TD0910 is a high performance silicon bipolar MMIC housed in a hermetic high reliability stripline package.
The MP4TD0910 is designed for use where a general purpose broad band (4.
5 GHz) 50Ω gain block is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0910 is fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY 12 10 8 GAIN (dB) 6 4 2 0 www.
DataSheet4U.
com 0 .
1 Id= 3 5 m A MP4TD0910 Gold-Ceramic Microstrip Package Outline1,2 .
040 1,02 4 GND RF INPUT 1 RF OUT AND BIAS 3 .
020 0,51 2 GND .
004 ±.
002 0,1±0,05 .
100 2,54 .
030 0,76 .
495 ±.
030 12,57 ±0,76 Notes: (unless otherwise specified) 1.
Dimensions are in / mm 2.
Tolerance: in .
xxx = ±.
005; mm .
xx = ±.
13 Pin Configuration Pin Number 1 2&4 3 1 F R E Q U E N C Y (G H z) 10 Pin Description RF Input AC/DC Ground RF Output and DC Bias Ordering Information Model No.
MP4TD0910 MP4TD0910T Units dB dB GHz dBm dB dBm ps V mV/°C Package Ceramic Tape and Reel Min.
7.
0 7.
0 Typ.
7.
5 ±0.
5 5.
0 1.
9 1.
8 11.
5 6.
0 23.
0 100 7.
8 -16.
0 Max.
9.
0 ±0.
7 8.
6 - Electrical Specifications @ TA = +25°C, Id = 35 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (⏐S21⏐2) f = 0.
1 GHz Gain Flatness f = 0.
1 to 3.
0 GHz ΔGp f3dB 3 dB Bandwidth SWRin Input SWR f = 0.
1 to 3.
0 GHz SWRout Output SWR f = 0.
1 to 2.
0 GHz P1dB Output Power @ 1 dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Voltage Temperat...


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