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EIB1314-4P

Excelics Semiconductor
Part Number EIB1314-4P
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Nov 20, 2009
Detailed Description Excelics • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYP...
Datasheet PDF File EIB1314-4P PDF File

EIB1314-4P
EIB1314-4P

Overview
Excelics • • • • • • 13.
75-14.
5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.
5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.
5/7.
5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs.
Contact factory.
Effective 03/2003 13.
75-14.
5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Gain at 1dB Compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Power Added Efficiency at 1dB compression f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=13.
75-14.
5GHz Vds=8V, Idsq=0.
5 Idss(EIA), 0.
6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24mA -13 2200 rd EIB1314-4P MAX MIN 35 6.
5 TYP 36 7.
5 MAX UNIT dBm dB MIN 35.
5 7.
5 TYP 36.
5 8.
5 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 27 1760 43 2880 3000 -1.
0 -15 4.
5 -2.
5 3400 2200 22 1700 49* 2720 1400 -2.
0 -15 4.
5 o % mA dBm 3400 mA mS -3.
5 V V C/W Drain Breakdown Voltage Igd=9.
6mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=26dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.
DataSheet4U.
com Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2 Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc.
, 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-...


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