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D3NB50

STMicroelectronics
Part Number D3NB50
Manufacturer STMicroelectronics
Description STD3NB50
Published Nov 24, 2009
Detailed Description STD3NB50 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 s s s s s V DSS 500 ...
Datasheet PDF File D3NB50 PDF File

D3NB50
D3NB50

Overview
STD3NB50 N - CHANNEL 500V - 2.
5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STD3NB50 s s s s s V DSS 500 V R DS(on) < 2.
8 Ω ID 3A TYPICAL RDS(on) = 2.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 1 DPAK TO-252 (Suffix "T4") DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching ...


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