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RJK2009DPM

Part Number	RJK2009DPM
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Dec 1, 2009
Detailed Description	RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-...
Datasheet	RJK2009DPM PDF File

Overview

RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.
2.
00 Aug.
09.
2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1.
Gate 2.
Drain 3.
Source S 1 2 3 Absolute Maximum Ratings www.
DataSheet4U.
com (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 40 160 40 160 40 106 60 2.
08 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain pea...

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RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology

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