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KST8550S

Guangdong Kexin Industrial
Part Number KST8550S
Manufacturer Guangdong Kexin Industrial
Description PNP Transistors
Published Dec 7, 2009
Detailed Description SMD Type PNP Transistors KST8550S SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Collec...
Datasheet PDF File KST8550S PDF File

KST8550S
KST8550S

Overview
SMD Type PNP Transistors KST8550S SOT-23 +0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1 Transistors Unit: mm Features +0.
1 2.
4-0.
1 Collector current: IC-=0.
5A +0.
1 1.
3-0.
1 1 +0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1 2 0.
55 0.
4 3 +0.
05 0.
1-0.
01 +0.
1 0.
97-0.
1 1.
Base 2.
Emitter 3.
collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -0.
5 0.
3 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 www.
DataSheet4U.
com Parameter Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE Testconditons IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA Min -40 -25 -5 Typ +0.
1 0.
38-0.
1 0-0.
1 Max Unit V V V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency -0.
1 -0.
1 -0.
1 120 50 -0.
5 -1.
2 150 350 A A A VCE(sat) IC=-500mA, IB=-50mA VBE(sat) IC=-500mA, IB=-50mA fT VCE= -6V, IC= -20mA,f=30MHz V V MHz hFE Classification Marking Rank hFE L 120 200 2TY H 200 350 www.
kexin.
com.
cn 1 SMD Type KST8550S Typical Characteristics Transistors Fig.
1 Static Characteristic Fig.
2 DC Current Gain www.
DataSheet4U.
com Fig.
3 Bacse-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Fig.
4 Current Gain Bandwidth Product 2 www.
kexin.
com.
cn ...


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