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IRHNB7Z60

International Rectifier
Part Number IRHNB7Z60
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Dec 14, 2009
Detailed Description PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4...
Datasheet PDF File IRHNB7Z60 PDF File

IRHNB7Z60
IRHNB7Z60

Overview
PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
009Ω 0.
009Ω 0.
009Ω 0.
009Ω ID 75*A 75*A 75*A 75*A IRHNB7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge reduces the power...


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