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K4M56323PG-F

Part Number	K4M56323PG-F
Manufacturer	Samsung semiconductor
Description	2M x 32Bit x 4 Banks Mobile SDRAM
Published	Dec 23, 2009
Detailed Description	K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible wit...
Datasheet	K4M56323PG-F PDF File

Overview

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.
8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) -.
DPD (Deep Power Down) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by ...

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