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STT2602

SeCoS Halbleitertechnologie GmbH
Part Number STT2602
Manufacturer SeCoS Halbleitertechnologie GmbH
Description N-Channel Enhancement Mode Power MosFET
Published Dec 29, 2009
Detailed Description STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Produ...
Datasheet PDF File STT2602 PDF File

STT2602
STT2602

Overview
STT2602 Elektronische Bauelemente 6.
3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2602 is universally used for all commercial-industrial applications.
Features * Low On-Resistance * Capable of 2.
5V Gate Drive D D 5 S 4 6 D REF.
A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millimeter Min.
Max.
1.
10 MAX.
0 0.
10 0.
70 1.
00 0.
12 REF.
2.
70 3.
10 2.
60 3.
00 1.
40 1.
80 REF.
L L1 b e e1 Millimeter Min.
Max.
0.
45 REF.
0.
60 REF.
0° 10° 0.
30 0.
50 0.
95 REF.
1.
90 REF.
Absolute Maximum Ratings www.
DataSheet4U.
com Parameter Symbol VDS VGS Ratings 20 ± 12 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.
5V Continuous Drain Current,VGS@4.
5V Pulsed Drain Current 1,2 3 3 ID@TC=25 C ID@TC=70C IDM PD@TC=25 C o o o 6.
3 5 30 2 0.
016 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-case 3 Symbol Max.
Rthj-c Ratings 62.
5 Unit o C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 4 STT2602 Elektronische Bauelemente o 6.
3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=55 C) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
20 _ Typ.
_ Max.
_ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=±12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=10V, ID=5.
5A VGS=4.
5V, ID=5.
3A VGS=2.
5V, ID=2.
6A VGS=1.
8V, ID=1...


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