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STT2PF60L

Part Number	STT2PF60L
Manufacturer	STMicroelectronics
Description	P-CHANNEL POWER MOSFET
Published	Dec 29, 2009
Detailed Description	P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STT2PF60L s s STT2PF60L VDSS 60 V...
Datasheet	STT2PF60L PDF File

Overview

P-CHANNEL 60V - 0.
20 Ω - 2A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STT2PF60L s s STT2PF60L VDSS 60 V RDS(on) <0.
25 Ω ID 2A s TYPICAL RDS(on) = 0.
20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s CELLULAR www.
DataSheet4U.
com MARKING s SOT23-6L INTERNAL SCHEMATIC DIAGRAM STP6 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 60 60 ± 15 2 1.
3 8 1.
6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area.
May 2002 .
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 STT2PF60L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max.
Operating Junction Temperature Storage Temperature Max Max 78 156 150 -55 to 150 °C/W °C/W °C °C (*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz Cu in FR-4 board ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 15 V Min.
60 1 10 ±100 Typ.
Max.
Unit V µA µA n...

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STT2PF60L P-CHANNEL POWER MOSFET - STMicroelectronics

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