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SST32HF201

Silicon Storage Technology
Part Number SST32HF201
Manufacturer Silicon Storage Technology
Description (SST32HFxxx) Multi-Purpose Flash (MPF) SRAM ComboMemory
Published Jan 9, 2010
Detailed Description Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF201 / SST32HF202 / SST32HF401 / SST32HF402 SST32HF201 / 202 / 401 / ...
Datasheet PDF File SST32HF201 PDF File

SST32HF201
SST32HF201

Overview
Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF201 / SST32HF202 / SST32HF401 / SST32HF402 SST32HF201 / 202 / 401 / 4022Mb Flash + 1Mb SRAM, 2Mb Flash + 2Mb SRAM, 4Mb Flash + 1Mb SRAM, 4Mb Flash + 2Mb SRAM (x16) MCP ComboMemories Preliminary Specifications FEATURES: • MPF + SRAM ComboMemory – SST32HF201: 128K x16 Flash + 64K x16 SRAM – SST32HF202: 128K x16 Flash + 128K x16 SRAM – SST32HF401: 256K x16 Flash + 64K x16 SRAM – SST32HF402: 256K x16 Flash + 128K x16 SRAM • Single 2.
7-3.
3V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while Erase/Program Flash • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical) • Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks • Fast Read Access Times: – Flash: 70 and 90 ns – SRAM: 70 and 90 ns • Latched Address and Data for Flash • Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF201/202: 2 seconds (typical) SST32HF401/402: 4 seconds (typical) • Flash Automatic Erase and Program Timing – Internal VPP Generation • Flash End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Conforms to Flash pinout • Package Available – 48-ball LFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST32HF20x/40x ComboMemory devices integrate a 128K x16 or 256K x16 CMOS flash memory bank with a 64K x16 or 128K x16 CMOS SRAM memory bank in a www.
DataSheet4U.
com Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology.
Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec.
The entire flash memory bank can be erased and programm...


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