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10WT10FN

Vishay
Part Number 10WT10FN
Manufacturer Vishay
Description High Performance Schottky Generation
Published Jan 11, 2010
Detailed Description 10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.0, 10 A 10UT10 10WT10FN FEATURES • ...
Datasheet PDF File 10WT10FN PDF File

10WT10FN
10WT10FN


Overview
10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.
0, 10 A 10UT10 10WT10FN FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs.
IR trade off for high efficiency Base cathode 4 Base cathode 4 • Increased ruggedness for reverse avalanche capability • RBSOA available • Negligible switching losses 3 1 Anode 2 Anode Cathode 2 1 Cathode 3 Anode Anode • Submicron trench technology • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified I-PAK (TO-251AA) D-PAK (TO-252AA) APPLICATIONS • High efficiency SMPS • Automotive PRODUCT SUMMARY IF(AV) VRRM Maximum VF at 10 A at 125 °C 10 A 100 V 0.
66 V • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • Dc-to-dc systems • Increased power density systems www.
DataSheet4U.
com SYMBOL VRRM VF TJ MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS 10 Apk, TJ = 125 °C (typical) Range VALUES 100 0.
615 - 55 to 175 UNITS V V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 25 °C 10UT10 10WT10FN 100 UNITS V Document Number: 94647 Revision: 04-May-09 For technical questions, contact: diodes-tech@vishay.
com www.
vishay.
com 1 10UT10, 10WT10FN Vishay High Power Products High Performance Schottky Generation 5.
0, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Non-repetitive avalanche energy Repetitive avalanche current Note (1) Measured connecting 2 anode pins SYMBOL IF(AV) IFSM 10 ms sine or 6 ms rect.
pulse EAS IAR TJ = 25 °C, IAS = 3 A, L = 12 mH Limited by frequency of operation and time pulse duration so that TJ < TJ max.
IAS at TJ max.
as a function of time pulse (see fig.
8) TEST CONDITIONS 50 % duty cycle at TC = 159 °C, rectangular waveform 5 µs sine or 3 µs rect.
pulse Following any rated load condition and with rated VRRM applied VALUES 10 610 A 110 5...



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