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TPC8010-H

Toshiba Semiconductor
Part Number TPC8010-H
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 17, 2010
Detailed Description TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters N...
Datasheet PDF File TPC8010-H PDF File

TPC8010-H
TPC8010-H

Overview
TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 18 nC (typ.
) Low drain-source ON resistance: RDS (ON) = 12 mΩ (typ.
) High forward transfer admittance: |Yfs| = 11 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) www.
DataSheet4U.
com Single pulse avalanche energy Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Rating 30 30 ±20 11 44 1.
9 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1B Drain power dissipation W Weight: 0.
080 g (typ.
) 1.
0 W Circuit Configura...


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