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TPC8012-H

Toshiba Semiconductor
Part Number TPC8012-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application...
Datasheet PDF File TPC8012-H PDF File

TPC8012-H
TPC8012-H

Overview
TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application DC-DC Converters Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.
28 Ω (typ.
) High forward transfer admittance: |Yfs| = 1.
35 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy www.
DataSheet4U.
com (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 200 200 ±30 1.
8 7.
2 1.
9 Unit V V V A Drain power dissipation W JEDEC JEITA TO-92 ― 2-6J1B 1.
0 W TOSHIBA Weight: 0.
80 g (typ.
) 2.
05 1.
8 0.
19 150 -55...


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