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TPC8016-H

Toshiba Semiconductor
Part Number TPC8016-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and Hi...
Datasheet PDF File TPC8016-H PDF File

TPC8016-H
TPC8016-H

Overview
TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.
) Low drain-source ON resistance: R DS (ON) = 3.
7 mO (typ.
) High forward transfer admittance: |Yfs| = 25 S (typ.
) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement-mode: V th = 1.
1 to 2.
3 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 ±20 15 60 1.
9 W Unit V V V A JEDEC JEITA TOSHIBA ? ? 2-6J1B Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy www.
DataSheet4U.
com (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Weight: 0.
080 g (typ.
) PD EA S IAR EAR Tch Tstg 1.
0 W Circuit Configuration 146 15 0.
19 150 −55 to 150 mJ 8 7 6 5 A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2003-07-14 TPC8016-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.
8 Unit °C/W Thermal resistance, channel to ambient (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8016 H •¦ Type Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.
4 × 25.
4 × 0.
8 (unit: mm) FR-4 25.
4 × 25.
4 × 0.
8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initi...


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