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TPC8035-H

Toshiba Semiconductor
Part Number TPC8035-H
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Jan 17, 2010
Detailed Description TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8035-H High Efficiency DC-DC Convert...
Datasheet PDF File TPC8035-H PDF File

TPC8035-H
TPC8035-H

Overview
TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 2.
3 mΩ (typ.
) High forward transfer admittance: |Yfs| = 70 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) S...


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