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TMD7185-2

Toshiba Semiconductor
Part Number TMD7185-2
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER MMIC AMPLIFIER
Published Jan 17, 2010
Detailed Description MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.0dBm at ...
Datasheet PDF File TMD7185-2 PDF File

TMD7185-2
TMD7185-2

Overview
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD7185-2 FEATURES n HIGH POWER P1dB=33.
0dBm at 7.
1GHz to 8.
5GHz n HIGH GAIN G1dB=28.
0dB at 7.
1GHz to 8.
5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm °C °C RATING 15 -10 10 -30 ∼ +80 -65 ∼ +175 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression www.
DataSheet4U.
com Drain Current Input VSWR 3rd Order Intermodulation Distortion Point ...


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