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BLL6H1214LS-250

NXP
Part Number BLL6H1214LS-250
Manufacturer NXP
Description LDMOS L-band Radar Power Transistor
Published Jan 18, 2010
Detailed Description BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. ...
Datasheet PDF File BLL6H1214LS-250 PDF File

BLL6H1214LS-250
BLL6H1214LS-250

Overview
BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.
01 — 11 December 2009 Objective data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (GHz) 1.
2 to 1.
4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features „ Typical pulsed RF performance at a freq...


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