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BLF881S

NXP

UHF Power LDMOS Transistor

BLF881; BLF881S UHF power LDMOS transistor Rev. 01 — 10 December 2009 Preliminary data sheet 1. Product profile 1.1 Gen...


BLF881S

NXP


Octopart Stock #: O-661271

Findchips Stock #: 661271-F

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Description
BLF881; BLF881S UHF power LDMOS transistor Rev. 01 — 10 December 2009 Preliminary data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this d
More View evice makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 PL - PL(PEP) 140 - PL(AV) Gp (W) 33 21 21 ηD 49 34 IMD3 −34 - IMDshldr (dBc) −33[1] (W) (W) (dB) (%) (dBc) Measured [dBc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features www.DataSheet4U.com „ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 dB ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion = −34 dBc „ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 33 W ‹ Power gain = 21 dB ‹ Drain efficiency = 34 % ‹ Shoulder distance = −33 dBc (4.3 MHz from center frequency) „ Integrated ESD protection „ Excellent ruggedness „ High power gain NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor „ „ „ „ High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications „ Communication transmitter applications in the UHF band „ Industrial applications in the UHF band 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF881 (SOT467C) 1 3 2 2 3 sym112 1 BLF881S (SOT467B) 1 2 3 drain gate source [1] 1 3 2 1 2 3 sym112 www.DataSheet4U.com [1] Connected to flange. 3. Ordering information Table 3. Ordering information Name Description BLF881 BLF881S earless LDMOST ceramic package; 2 leads Version SOT467B Type number Package flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C BLF881_BLF881S_1 © NXP B.V. 2009. All rights reserved. Preliminary data sheet Rev. 01 — 10 December 2009 2 of 17 NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min −0.5 −65 Max 104 +13 +150 200 Unit V V °C °C 5. Thermal characteristics T






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