DatasheetsPDF.com

BLF881S

NXP
Part Number BLF881S
Manufacturer NXP
Description UHF Power LDMOS Transistor
Published Jan 18, 2010
Detailed Description BLF881; BLF881S UHF power LDMOS transistor Rev. 01 — 10 December 2009 Preliminary data sheet 1. Product profile 1.1 Gen...
Datasheet PDF File BLF881S PDF File

BLF881S
BLF881S


Overview
BLF881; BLF881S UHF power LDMOS transistor Rev.
01 — 10 December 2009 Preliminary data sheet 1.
Product profile 1.
1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The transistor can deliver 140 W from HF to 1 GHz.
The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1.
Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.
1 858 PL - PL(PEP) 140 - PL(AV) Gp (W) 33 21 21 ηD 49 34 IMD3 −34 - IMDshldr (dBc) −33[1] (W) (W) (dB) (%) (dBc) Measured [dBc] with delta marker at 4.
3 MHz from center frequency.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features www.
DataSheet4U.
com „ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.
5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 dB ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion = −34 dBc „ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.
5 A: ‹ Average output power = 33 W ‹ Power gain = 21 dB ‹ Drain efficiency = 34 % ‹ Shoulder distance = −33 dBc (4.
3 MHz from center frequency) „ Integrated ESD protection „ Excellent ruggedness „ High power gain NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor „ „ „ „ High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications „ Communication transmitter applications in the UHF band „ Industrial applications in the UHF band 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF881 (SOT467C) 1 3 2 2 3 sym1...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)