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K4S64323LH-FC

Samsung semiconductor
Part Number K4S64323LH-FC
Manufacturer Samsung semiconductor
Description 512K x 32Bit x 4 Banks Mobile SDRAM
Published Jan 20, 2010
Detailed Description K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compat...
Datasheet PDF File K4S64323LH-FC PDF File

K4S64323LH-FC
K4S64323LH-FC

Overview
K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.
5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
90Balls FBGA with 0.
8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri...


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