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BTA12-600BW3G

ON Semiconductor
Part Number BTA12-600BW3G
Manufacturer ON Semiconductor
Description Triacs
Published Jan 22, 2010
Detailed Description BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control...
Datasheet PDF File BTA12-600BW3G PDF File

BTA12-600BW3G
BTA12-600BW3G

Overview
BTA12-600BW3G, BTA12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required.
Features • Blocking Voltage to 800 V • On-State Current Rating of 12 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 2000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 2.
5 A/ms minimum at 125°C • Internally Isolated (2500 VRMS) • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA12−600BW3G BTA12−800BW3G VDRM, VRRM 600 800 V On-State RMS Current IT(RMS) (Full Cycle Sine Wave, 60 Hz, TC = 80°C) 12 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C...


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