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XP02401

Panasonic Semiconductor
Part Number XP02401
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Jan 23, 2010
Detailed Description Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.12+0.05 –0.02 For general...
Datasheet PDF File XP02401 PDF File

XP02401
XP02401

Overview
Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type (0.
425) Unit: mm 0.
12+0.
05 –0.
02 For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half 0.
20±0.
05 5 4 1.
25±0.
10 2.
1±0.
1 1 2 3 (0.
65) (0.
65) 1.
3±0.
1 2.
0±0.
1 10˚ ■ Basic Part Number • 2SB0709A (2SB709A) × 2 0.
9±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 150 150 −55 to +150 Unit V V V mA mA mW °C °C Tr1 1: Emitter (Tr1) 2: Base 3: Emitter (Tr2) EIAJ: SC-88A 0 to 0.
1 0.
9+0.
2 –0.
1 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 7R Internal Connection 5 4 5˚ Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C www.
DataSheet4U.
com Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/ Large) Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VCE = −10 V, IC = −2 mA VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −60 −50 −7 Typ Max − 0.
1 −100 160 0.
50 0.
99 − 0.
3 80 2.
7 − 0.
5 460 VCE(sat) fT Cob MHz pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Ratio between 2 elements No...


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