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MTD15N06VL

Motorola
Part Number MTD15N06VL
Manufacturer Motorola
Description TMOS POWER FET
Published Jan 28, 2010
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06VL/D ™ TMOS V ™ Designer's Data Sheet MTD15N06...
Datasheet PDF File MTD15N06VL PDF File

MTD15N06VL
MTD15N06VL

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD15N06VL/D ™ TMOS V ™ Designer's Data Sheet MTD15N06VL Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularl...


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