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RJN1163

RFsemi Technologies
Part Number RJN1163
Manufacturer RFsemi Technologies
Description Electret Capacitor Microphone Applications
Published Jan 28, 2010
Detailed Description N-Channel Junction FET RJN1163 Electret Capacitor Microphone Applications Features Specially suited for use in audio a...
Datasheet PDF File RJN1163 PDF File

RJN1163
RJN1163

Overview
N-Channel Junction FET RJN1163 Electret Capacitor Microphone Applications Features Specially suited for use in audio and telephone electret capacitor microphones Excellent voltage gain Very low noise High ESD voltage Ultra-small size package Package Type : SOT-300 [unit:mm] 1.
60±0.
05 0.
31±0.
03 0.
12±0.
03 3 1.
40±0.
01 0.
80±0.
05 0~0.
02 Applications Cellular phones Portable audio PDAs MP3 players 1 0.
21±0.
03 0.
5±0.
05 2 0.
21±0.
03 0.
5±0.
05 MAX 0.
34 [TOP VIEW] [SIDE VIEW] 1.
Drain 2.
Source 3.
Gate Absolute Maximum Ratings at Ta = 25 oC Parameter Gate-to-Drain Voltage Gate Current Drain Current www.
DataSheet4U.
com Allowable Power Dissipation Symbol VGDO IG ID PD Tj Tstg Ratings -20 10 10 100 150 -55 to +150 Unit V mA mA mW o o Junction Temperature Storage Temperature C C Electrical Characteristics at Ta = 25 o C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS |yfs| Ciss Crss Conditions IG = -100µA VDS = 5V, ID = 1µA VDS = 5V, VGS = 0 VDS = 5V, VGS = 0, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDS = 5V, VGS = 0, f = 1MHz Min -20 -0.
2 70* 0.
4 Ratings Typ Max -0.
6 1.
2 3.
5 0.
8 -1.
5 430* Unit V V µA mS pF pF * The RJN1163 is classified by IDSS as follows Classification A1 IDSS(µA) 70~120 A2 100~170 B 150~270 C 210~350 D 320~430 RFsemi Technologies, Inc.
Rev.
4 RJN1163 Electrical Characteristics Parameter o Symbol Conditions Min Typ -3.
0 -1.
2 Max Unit dB dB dB MΩ Ω % dB [Ta = 25 C , VCC = 4.
5V, RL = 1kΩ, CIN = 15pF, See Specified Test Circuit.
] Voltage Gain GV VIN = 10 mV, f = 1kHz > 1.
5V VIN = 10 mV, VCC = 4.
5 Reduced Voltage Characteristics ∆GVV f = 1kHz to 110Hz Frequency Characteristics ∆GVf Input Impedance ZIN f = 1kHz Output Impedance ZO f = 1kHz Total Harmonic Distortion THD VIN = 10mV, f = 1kHz Output Noise Voltage VNO VIN = 0, A curve -3.
5 -1.
0 700 30 1.
0 -110 Test Circuit Voltage Gain Frequenc...


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