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UPD70F3134A

NEC
Part Number UPD70F3134A
Manufacturer NEC
Description 32-Bit Single-Chip Microcontrollers
Published Jan 29, 2010
Detailed Description Application Note V850E/MA1, V850E/MA2, V850E/MA3, V850E/ME2 32-Bit Single-Chip Microcontrollers PCI Host Bridge Macro ...
Datasheet PDF File UPD70F3134A PDF File

UPD70F3134A
UPD70F3134A


Overview
Application Note V850E/MA1, V850E/MA2, V850E/MA3, V850E/ME2 32-Bit Single-Chip Microcontrollers PCI Host Bridge Macro V850E/MA1: V850E/MA2: µPD703103A µPD703108 µPD703105A µPD703106A www.
DataSheet4U.
com µPD703106A(A) µPD703107A µPD703107A(A) µPD70F3107A µPD70F3107A(A) V850E/MA3: V850E/ME2: µPD703131A µPD703111A µPD703131AY µPD703132A µPD703132AY µPD703133A µPD703133AY µPD703134A µPD703134AY µPD70F3134A µPD70F3134AY Document No.
U17121EJ1V1AN00 (1st edition) Date Published September 2004 N CP(K) 2004 Printed in Japan [MEMO] www.
DataSheet4U.
com 2 Application Note U17121EJ1V1AN NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction.
If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc.
, the device may malfunction.
Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN).
2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction.
If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.
, causing malfunction.
CMOS devices behave differently than Bipolar or NMOS devices.
Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry.
Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin.
All handling related to unused pins must be judged separately for each device and according to related specifications governing the device.
3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation.
Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when i...


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