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WCMA1008U1X

Weida Semiconductor

128K x 8 Static RAM

A1008U1X WCMA1008U1X 128K x 8 Static RAM Features • High Speed — 55ns and 70ns availability • Voltage range — 2.7V–3.6...


Weida Semiconductor

WCMA1008U1X

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Description
A1008U1X WCMA1008U1X 128K x 8 Static RAM Features High Speed — 55ns and 70ns availability Voltage range — 2.7V–3.6V Ultra low active power — Typical active current: 20 mA @ f = fmax (70ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power ic power-down feature, reducing the power consumption by over 99% when deselected. Writing to the device is accomplished by taking Chip Enable one (CE1) and Write Enable (WE) inputs LOW and the Chip Enable two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable one (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable two (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW, CE2 HIGH, and WE LOW). The WCMA1008U1X is available in a 32 Lead TSOP and STSOP packages. Functional Description The WCMA1008U1X is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), a...




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