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WCMA2008U1X

Weida Semiconductor

256K x 8 Static RAM

A2008U1X WCMA2008U1X 256K x 8 Static RAM Features • High Speed — 70ns availability • Voltage range — 2.7V–3.6V • Ultra...


Weida Semiconductor

WCMA2008U1X

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Description
A2008U1X WCMA2008U1X 256K x 8 Static RAM Features High Speed — 70ns availability Voltage range — 2.7V–3.6V Ultra low active power — Typical active current: 1 mA @ f = 1MHz — Typical active current: 7 mA @ f = fmax (70ns speed) Low standby power Easy memory expansion with CE1,CE2,and OE features Automatic power-down when deselected CMOS for optimum speed/power es power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). Writing to the device is accomplished by taking Chip Enable (CE1) and Write Enable (WE) inputs LOW and Chip Enable 2 (CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A17). Reading from the device is accomplished by taking Chip Enable (CE1) and Output Enable (OE) LOW while forcing Write Enable (WE) and Chip Enable 2 (CE2) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW). The WCMA2008U1X is available in a 36-ball FBGA package. Functional Description The WCMA2008U1X is a high-performance CMOS static RAM organized as 256K words by 8 bits...




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