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NTP6411AN

ON Semiconductor
Part Number NTP6411AN
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 4, 2010
Detailed Description NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features • Low RDS(on) • High Current Capability • 100% ...
Datasheet PDF File NTP6411AN PDF File

NTP6411AN
NTP6411AN


Overview
NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage − Continuous VGS $20 V Continuous Drain Steady TC = 25°C ID Current RqJC State TC = 100°C 77 A 54 Power Dissipation Steady TC = 25°C PD RqJC State 217 W Pulsed Drain Current tp = 10 ms IDM 285 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C Range +175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (VDD =...



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