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38N30

Fairchild Semiconductor
Part Number 38N30
Manufacturer Fairchild Semiconductor
Description FQA38N30
Published Feb 5, 2010
Detailed Description FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on...
Datasheet PDF File 38N30 PDF File

38N30
38N30

Overview
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.
4 A, 85 mΩ Features • 38.
4 A, 300 V, RDS(on) = 85 mΩ (Max.
) @ VGS = 10 V, ID = 19.
2 A • Low Gate Charge (Typ.
90 nC) • Low Crss (Typ.
70 pF) • 100% Avalanche Tested • RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, po...


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