DatasheetsPDF.com

MRF8S9100HR3

Freescale Semiconductor
Part Number MRF8S9100HR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistors
Published Feb 9, 2010
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N...
Datasheet PDF File MRF8S9100HR3 PDF File

MRF8S9100HR3
MRF8S9100HR3


Overview
Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev.
0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.
3 19.
3 19.
1 hD (%) 51.
6 52.
9 54.
1 MRF8S9100HR3 MRF8S9100HSR3 920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 108 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.
Gps (dB) 19.
1 19.
1 19.
0 hD (%) 43 44 45 SR1 @ 400 kHz (dBc) - 64.
1 - 63.
6 - 62.
8 SR2 @ 600 kHz (dBc) - 74.
5 - 74.
6 - 75.
1 EVM (% rms) 1.
8 2.
0 2.
3 CASE 465- 06, STYLE 1 NI - 780 MRF8S9100HR3 Frequency 920 MHz 940 MHz 960 MHz CASE 465A - 06, STYLE 1 NI - 780S MRF8S9100HSR3 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant www.
DataSheet4U.
com • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.
5, +70 - 6.
0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1.
Continuous use at maximum temperature will affect MTTF.
2.
MTTF calculator available at http://www.
freescale.
com/rf.
Select Software & Tools/Development Tools/Calculators to access ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)