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RJH60D3DPE

Renesas Technology
Part Number RJH60D3DPE
Manufacturer Renesas Technology
Description Silicon N Channel IGBT
Published Feb 18, 2010
Detailed Description RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in di...
Datasheet PDF File RJH60D3DPE PDF File

RJH60D3DPE
RJH60D3DPE

Overview
RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.
DataSheet4U.
com Preliminary REJ03G1844-0100 Rev.
1.
00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1.
Gate 2.
Collector 3.
Emitter 4.
Collecotor Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector peak current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Value at Tc = 25°C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 30 15 60 15 60 120 1.
04 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C REJ03G1844-0100 Rev.
1.
00 Oct 14, 2009 Page 1 of 3...


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