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AOP800

Alpha & Omega Semiconductors
Part Number AOP800
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel MOSFET
Published Feb 18, 2010
Detailed Description www.DataSheet4U.com AOP800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP800 uses ...
Datasheet PDF File AOP800 PDF File

AOP800
AOP800

Overview
www.
DataSheet4U.
com AOP800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications).
AOP800L is a Green Product ordering option.
AOP800 and AOP800L are electrically identical.
Features VDS (V) = 30V ID = 9.
3A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.
5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 9.
3 7.
5 40 2.
5 1.
6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOP800 www.
DataSheet4U.
com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=10V, I D=9.
3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, I D=7.
4A Forward Transconductance VDS=5V, ID=9.
3A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C 1 40 15.
5 22.
3 23 23 0.
75 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.
7 19.
2 VGS=10V, VDS=15V, I D=9.
3A 9.
36 2.
6 4.
2 5.
2 VGS=10V, VDS=15V, RL=1.
6Ω, RGEN=3Ω IF=9.
3A, dI/dt=100A/ µs IF=9.
3A, dI/dt=100A/ µs 4.
4 17.
3 3.
3 16.
7 6.
7 22 0.
85 24 1250 18 27 28 1.
8 Min 30 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns...


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