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GLA2N70

GTM CORPORATION
Part Number GLA2N70
Manufacturer GTM CORPORATION
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Feb 18, 2010
Detailed Description Pb Free Plating Product ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE : G L A2 N 7 0 N-CHANNEL ENHANCEMENT M...
Datasheet PDF File GLA2N70 PDF File

GLA2N70
GLA2N70

Overview
Pb Free Plating Product ISSUED DATE :2005/09/14 www.
DataSheet4U.
com REVISED DATE : G L A2 N 7 0 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 675V 10 0.
2A Description The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
*Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dimensions SOT-223 REF.
A C D E I H Millimeter Min.
Max.
6.
70 7.
30 2.
90 3.
10 0.
02 0.
10 0 10 0.
60 0.
80 0.
25 0.
35 REF.
B J 1 2 3 4 5 Millimeter Min.
Max.
13 TYP.
2.
30 REF.
6.
30 6.
70 6.
70 6.
30 3.
30 3.
70 3.
30 3.
70 1.
40 1.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@5V Continuous Drain Current, VGS@5V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 675 30 0.
2 0.
13 0.
5 1.
13 0.
01 0.
5 1 0.
5 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient Max.
Symbol Rthj-a Value 110 Unit /W GLA2N70 Page: 1/5 ISSUED DATE :2005/09/14 www.
DataSheet4U.
com REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
675 2.
0 Typ.
0.
52 0.
4 5.
5 1.
9 0.
5 7.
7 3.
6 24 44 286 25 6 Max.
4.
0 100 10 100 8.
0 10.
0 pF ns nC Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=1mA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=0.
2A VGS= 30V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS VDS=675V, VGS=0 VDS=540V, VGS=0 VGS=10V, ID=0.
2A VGS=5V, ID=0.
2A ID=0.
2A VDS=540V VGS=10V VDD=300V ID=0.
2A VGS=...


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