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MMDT5211W

SEMTECH ELECTRONICS
Part Number MMDT5211W
Manufacturer SEMTECH ELECTRONICS
Description (MMDT5210W - MMDT5212ZW) NPN Silicon Epitaxial Planar Digital Transistor
Published Feb 19, 2010
Detailed Description MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Comm...
Datasheet PDF File MMDT5211W PDF File

MMDT5211W
MMDT5211W

Overview
MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector (Output) Base (Input) R1 R2 Emitter (Common) Resistance Values Type MMDT5210W MMDT5211W MMDT5212W MMDT5213W MMDT5214W MMDT5215W MMDT5216W MMDT5217W MMDT5218W MMDT5219W R1 (KΩ) 47 10 22 47 10 10 4.
7 22 0.
51 1 R2 (KΩ) 10 22 47 47 5.
1 10 Type MMDT521DW MMDT521EW MMDT521FW MMDT521KW MMDT521LW MMDT521MW MMDT521NW MMDT521TW MMDT521VW MMDT521ZW R1 (KΩ) 47 47 4.
7 10 4.
7 2.
2 4.
7 22 2.
2 4.
7 R2 (KΩ) 10 22 10 4.
7 4.
7 47 47 47 2.
2 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO IC Ptot Tj TS Value 50 50 100 200 150 - 55 to + 150 Unit V V mA mW O C C O SEMTECH ELECTRONICS LTD.
® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 06/06/2007 MMDT5210W…MMDT521ZW Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA MMDT5218/521K/521L/521VW MMDT5219/521D/521FW MMDT5211W MMDT5212/521EW MMDT521ZW MMDT5213/5214/521MW MMDT521N/521TW 1) MMDT5210/5215/5216/5217W Symbol Min.
20 30 35 60 60 80 80 160 50 50 Typ.
250 Max.
200 400 460 100 0.
01 0.
1 0.
2 0.
4 0.
5 1 1.
5 2 0.
3 3 2.
5 2.
5 5 4 3 3 3 1.
1 1.
7 1.
3 1.
4 Unit nA hFE Collector Base Cutoff Current at VCB = 50 V Emitter Base Cutoff Current at VEB = 6 V MMDT5210/5215/5216/5217W MMDT5213W MMDT5212/5214/521D/521E/521M/521N/521TW ICBO MMDT521ZW MMDT5211W MMDT521F/521KW MMDT5219W MMDT5218/521L/521VW Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.
5 mA Transition Frequency at VCB = 10 V, -IE = 5 mA, f = 100 MHz Input Voltage (ON) at VO = 0.
3 V, IO = 20 mA MMDT521V/521L/5219/5218W at VO = 0.
3 V, IO = 20 mA MMDT521FW at VO = 0.
3 V, IO = 2 mA MMDT521TW at VO = 0.
3 V, IO = 2 mA MMDT521DW at VO = 0.
3 V...


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