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CMT4410

Champion Microelectronic Corporation
Part Number CMT4410
Manufacturer Champion Microelectronic Corporation
Description N-Channel MOSFET
Published Feb 21, 2010
Detailed Description CMT4410 N-CHANNEL 30V MOSFET www.DataSheet4U.com STRUCTURE ! FEATURES ! ! ! Silicon N-channel MOSFET Low Qg Low on-...
Datasheet PDF File CMT4410 PDF File

CMT4410
CMT4410

Overview
CMT4410 N-CHANNEL 30V MOSFET www.
DataSheet4U.
com STRUCTURE ! FEATURES ! ! ! Silicon N-channel MOSFET Low Qg Low on-resistance Excellent resistance to damage from static electricity PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL D R AIN Top View 1 2 3 4 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 8 7 6 5 G AT E * SOURCE N-Channel MOSFET * Gate Protection Diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.
Use a protection circuit when the fixed voltage are exceeded.
ORDERING INFORMATION Part Number CMT4410 Package 8-PIN SOP (S08) ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) Rating Drain-to-Source Voltage Drain to Current － Continuous (at 25℃) － Pulsed* Reverse Drain to Current － Continuous (at 25℃) － Pulsed* Source Current (Body Diode) － Continuous (at 25℃) － Pulsed* Gate-to-Source Voltage － Continue Total Power Dissipation (TC = 25℃) Storage Temperature Range Channel Temperature * Pw≦10ms, Duty cycle≦1% Symbol VDS ID IDP IR IDRP IS ISP VGS PD TSTG Tch Value 30 10 40 10 40 1.
3 5.
2 ±20 2.
0 -55 to 150 150 V W ℃ ℃ A A Unit V A 2001/06/18 Draft Champion Microelectronic Corporation Page 1 CMT4410 N-CHANNEL 30V MOSFET www.
DataSheet4U.
com THERMAL RESISTANCE (Ta = 25℃) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.
5 Unit ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specified, Ta = 25℃.
CMT4410 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 1mA) Zero Gate Voltage Drain Current (VDS = 30 V, VGS = 0 V) Gate-Source Leakage Current (Vgs = ±20 V, VDS = 0 V) Gate Threshold Voltage (VDS =10V, ID = 1mA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) (VGS = 4.
5 V, ID = 10A) (VGS = 4.
0 V, ID = 10A) Forward Transfer Admittance (VDS = 10V, ID = 10A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time ** Total Gate Charge Gate-Source Charge Gate-D...


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