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TIM5964-35SLA

Toshiba Semiconductor
Part Number TIM5964-35SLA
Manufacturer Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Published Feb 22, 2010
Detailed Description FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9G...
Datasheet PDF File TIM5964-35SLA PDF File

TIM5964-35SLA
TIM5964-35SLA

Overview
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
5dBm at 5.
9GHz to 6.
4GHz ･HIGH GAIN G1dB= 9.
0dB at 5.
9GHz to 6.
4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-35SLA RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.
0A f = 5.
9 to 6.
4GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.
0dBm, f= 5MHz (Sing...


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