DatasheetsPDF.com

TIM5964-12UL

Part Number	TIM5964-12UL
Manufacturer	Toshiba Semiconductor
Description	MICROWAVE POWER GaAs FET
Published	Feb 22, 2010
Detailed Description	MICROWAVE POWER GaAs FET TIM5964-12UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.5dBm at 5.9GHz to...
Datasheet	TIM5964-12UL PDF File

Overview

MICROWAVE POWER GaAs FET TIM5964-12UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.
5dBm at 5.
9GHz to 6.
4GHz ŋHIGH GAIN G1dB= 10.
0dB at 5.
9GHz to 6.
4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.
5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.
6A f= 5.
9 to 6.
4GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc ...

Similar Datasheet

TIM5964-12UL MICROWAVE POWER GaAs FET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)