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TIM5964-25UL Datasheet PDF


Part Number TIM5964-25UL
Manufacturer Toshiba Semiconductor
Title MICROWAVE POWER GaAs FET
Description FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 44.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALL...
Features ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 44.5dBm at 5.9GHz to 6.4GHz ・HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-25UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow...

File Size 366.46KB
Datasheet TIM5964-25UL PDF File








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