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SI4642DY

Part Number	SI4642DY
Manufacturer	Vishay Siliconix
Description	N-Channel 30-V (D-S) MOSFET
Published	Feb 27, 2010
Detailed Description	New Product Si4642DY www.DataSheet4U.com Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SU...
Datasheet	SI4642DY PDF File

Overview

New Product Si4642DY www.
DataSheet4U.
com Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.
00375 at VGS = 10 V 0.
0047 at VGS = 4.
5 V ID (A)a 34 30 Qg (Typ) 35.
7 nC FEATURES • SkyFET™ Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested APPLICATIONS • Notebook CPU Core • Buck Converter • Synchronous Rectifier Switch RoHS COMPLIANT SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4642DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G N-Channel MOSFET S Schottky Diode D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 34 27 22.
7b, c 18b, c 70 7 3.
1b, c 45 101 7.
8 5 3.
5b, c 2.
2b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a.
Based on TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 Board.
c.
t = 10 sec.
d.
Maximum under Steady State conditions is 80 °C/W.
t ≤ 10 sec Steady State Symbol RthJA RthJF Typ 29 13 Max 35 16 Unit °C/W Document Number: 74430 S-71069-Rev.
A, 21-May-07 www.
vishay.
com 1 New Product Si4642DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On -State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b www.
DataSheet4U.
com Symbol VDS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(of...

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SI4642DY N-Channel 30-V (D-S) MOSFET - Vishay Siliconix

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